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Power Semiconductor Division
Rectifier Diode
Phase Control Thyristor
Power Module
Fast Switching Thyristor
Power Stack
Rectifier Diodes - Stud / Flat Base
upto 1800V
Type
Datasheet/
Drawing
V
RRM
[V]
V
RSM
=V
RRM
+100V
I
FAVM
/ T
C
[A / °C]
@180° Sine
I
FSM
[A]
@ 10ms
T
jmax
ʃi
2
t
[A
2
S]
@ 10ms
T
jmax
V
F
/ I
F
[ V / A ]
T
jmax
V
F(TO)
[V]
T
jmax
r
FT
[mΩ]
@T
jmax
R
thJC
[°C/W]
@180° Sine
T
jmax
[ °C]
GDZP25N/R
200 --- 1600
25 / 125
320
510
1.63 / 78
0.85
10.00
1.5
180
GDZP26N/R
200 --- 1600
25 / 125
320
510
1.63 / 78
0.85
10.00
1.5
180
GDZP45N/R
200 --- 1600
50 / 115
600
1800
1.60 / 150
0.85
5.00
0.85
180
GDZP70N/R
200 --- 1600
95 / 100
1000
5000
1.50 / 210
0.85
3.00
0.54
180
GDZP71N/R
200 --- 1600
95 / 100
1000
5000
1.50 / 210
0.85
3.00
0.54
180
GDZP100N/R
200 --- 1600
125 / 106
1500
11250
1.57 / 400
0.85
1.80
0.42
180
GDZP130N/R
200 --- 1600
165 / 100
2000
20000
1.53 / 520
0.85
1.30
0.35
180
GDZP150N/R
200 --- 1600
150 / 130
3600
64800
1.25 / 470
0.82
0.90
0.28
180
GDZP200N/R
200 --- 1600
200 / 130
4000
80000
1.25 / 630
0.85
0.60
0.22
180
GDZP240N/R
200 --- 1600
320 / 100
5000
125000
1.30 / 750
0.85
0.60
0.19
180
GDZP320N/R
200 --- 1600
320 / 125
6500
211000
1.35 / 1000
0.77
0.57
0.14
180
GDZP321N/R
200 --- 1600
420 / 100
8000
320000
1.25 / 1000
0.80
0.45
0.15
180
GDZP350N/R
200 --- 1600
350 / 125
6000
180000
1.15 / 1050
0.77
0.36
0.145
180
GDZP400N/R
200 --- 1600
400 / 125
7000
245000
1.12 / 1050
0.75
0.35
0.125
180
GDZP401N/R
200 --- 1600
400 / 125
7000
245000
1.12 / 1050
0.75
0.35
0.125
180
GDZP404N/R
200 --- 1800
400 / 120
7500
281000
1.68 / 1260
0.80
0.68
0.086
170
GDZP450N/R
200 --- 1800
450 / 120
10500
551000
1.45 / 1350
0.75
0.46
0.088
170
GDZP451N/R
200 --- 1800
450 / 120
10500
551000
1.45 / 1350
0.75
0.46
0.088
170
GDZP860N/R
200 --- 1800
860 / 100
16000
1280000
1.48 / 2500
0.74
0.20
0.078
180
upto 3600V
Type
Datasheet/
Drawing
V
RRM
[V]
V
RSM
=V
RRM
+100V
I
FAVM
/ T
C
[A / °C]
@180° Sine
I
FSM
[A]
10ms
T
jmax
ʃi
2
t
[A
2
S X 10
3
]
@ 10ms
T
jmax
V
F
/ I
F
[ V / A ]
T
jmax
V
F(TO)
[V]
@T
jmax
r
FT
[mΩ]
@T
jmax
R
thJC
[°C/W]
@180° Sine
T
jmax
[ °C]
GDZP405N/R
200 --- 2800
400/ 105
7500
281
1.75 / 1260
0.80
0.67
0.094
160
GDZP510N/R
3600
510 / 105
11800
696
1.48 / 1500
0.95
0.34
0.065
160
GDZP570N/R
3600
570 / 100
12000
720
1.62 / 1800
0.90
0.39
0.072
160
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